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| IGBT MODULE n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings ( Tc=25C) Items Symbols Collector-Emitter Voltage VCES Gate -Emitter Voltage VGES Continuous (25C / 80C) IC Collector 1ms (25C / 80C) IC PULSE Current Continuous -IC 1ms -IC PULSE Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Isolation Voltage A.C. 1min. Vis Mounting *1 Screw Torque Terminals *2 Terminals *3 Ratings 1200 20 800 / 600 1600 / 1200 600 1200 4100 +150 -40 +125 2500 4.5 11.0 1.7 Units V V A W C C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 4.0 0.5 Nm (M6) *2:Recommendable Value; 10.0 1.0 Nm (M8) *3:Recommendable Value; 1.5 0.2 Nm (M4) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=600mA VGE=15V IC=600A VGE=0V VCE=10V f=1MHz VCC=600V IC=600A VGE= 15V RG=2.0 IF=600A VGE=0V IF=600A, VGE=-15V Min. Typ. Max. 2.0 0.5 9.0 3.2 Units mA A V V nF 1.20 0.60 1.00 0.30 3.4 350 7.0 8.0 2.85 60 9 4 0.75 0.02 0.65 0.01 s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.03 0.06 Units C/W 0.0063 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com |
Price & Availability of 1MBI600PX-120
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